EVG®810 LT
Features
Technical Data
Wafer diameter (substrate size) |
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50 - 200, 100 - 300 mm |
LowTemp™ plasma activation chamber |
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Process gases: 2 standard process gases (N2 and O2) |
Universal mass flow controller: self-calibrating (up to 20.000 sccm) |
Vacuum system: 9x10-2 mbar |
Opening / closing of chamber: automated |
Loading / unloading of chamber: manual (wafer / substrate placed on loading pins) |
Optional features |
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Chuck for different wafer sizes |
Metal ion-free activation |
Additional process gases with gas mixing |
High vacuum system with turbo pump: 9x10-3 mbar base pressure |
Material systems that are qualified with LowTemp™ plasma activated bonding | ||||||||||||||||||||||||
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Si: Si/Si, Si/Si (thermally oxidized, Si (thermally oxidized)/Si (thermally oxidized) | ||||||||||||||||||||||||
TEOS/TEOS (thermally oxidized) | ||||||||||||||||||||||||
Si/Ge for Germanium-on-Insulator (GeOI) | ||||||||||||||||||||||||
Si/Si3N4 | ||||||||||||||||||||||||
Glass (borofloat, non-alkali): Si/Glas, Glass/Glass | ||||||||||||||||||||||||
Compound semiconductors: GaAs, GaP, InP | ||||||||||||||||||||||||
Polymers: PMMA, Cyclo Olefin Polymers | ||||||||||||||||||||||||
"Best Known Method" recipes available for users for the above and for other materials (full list available on request) EVG®301 Features
echnical Data
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